drd (xxxx) w complex array for relay drivers features ? epitaxial planar die construction ? one transistor and one sw itching diode in one package ? lead free by design/rohs compliant (note 1) ? "green" dev ice (note 2) mechanical data ? case: sot-363 ? case material: molded plastic. "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity : level 1 per j-std-020d ? terminal connecti ons: see diagram ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? marking information: see page 8 ? ordering information: see page 8 ? weight: 0.008 grams (approximate) p/n r1 (nom) r2 (nom) drdnb16w drdpb16w drdnb26w drdpb26w 1k 1k 220 220 10k 10k 4.7k 4.7k sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm a m j l d b c h k f r1 r2 r1 r2 drdn010w/ drdn005w drdp006w drdnb16w/ drdnb26w drdpb16w/ drdpb26w maximum ratings, total device @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p d 200 mw thermal resistance, junction to ambient air (note 3) r ja 625 c/w operating and storage temperature range t j , t stg -55 to +150 c maximum ratings, drdn010w npn transistor @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 45 v collector-emitter voltage v ceo 18 v emitter-base voltage v ebo 5 v collector current (note 3) i c 1000 ma maximum ratings, drdn005w npn transistor @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 4.0 v collector current ? continuous (note 3) i c 500 ma notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http:// www.di odes.com/products/lead_fr ee/index.php. 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as s hown on diodes inc. s uggested pad layout docum ent ap02001, which can be found on page 9 or our website at http:// www.di odes.com/datas heets/ap02001.pdf. ds30573 rev. 10 - 2 1 of 9 www. diodes.com drd (xxxx) w ? diodes incorporated
ds30573 rev. 10 - 2 2 of 9 www.diodes.com drd (xxxx) w ? diodes incorporated maximum ratings, drdp006w pnp transistor @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5.0 v collector current (note 3) i c -600 ma maximum ratings, drdnb16w pr e-biased npn transistor @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc 50 v input voltage v in -5 to +10 v output current i c 600 ma maximum ratings, drdnb26w pr e-biased npn transistor @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc 50 v input voltage v in -5 to +5 v output current i c 600 ma maximum ratings, drdpb16w pre-biased pnp transistor @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc -50 v input voltage v in +5 to -10 v output current i c 600 ma maximum ratings, drdpb26w pre-biased pnp transistor @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc -50 v input voltage v in +5 to -5 v output current i c -600 ma maximum ratings, switching diode @t a = 25c unless otherwise specified characteristic symbol value unit non-repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current (note 3) i fm 500 ma average rectified output current (note 3) i o 250 ma non-repetitive peak forward surge current @ t = 1.0 s @ t = 1.0s i fsm 4.0 2.0 a
ds30573 rev. 10 - 2 3 of 9 www.diodes.com drd (xxxx) w ? diodes incorporated electrical characteristics, drdn010w npn transistor @t a = 25c unless otherwise specified characteristic symbol min max unit test condition dc current gain h fe 150 800 ? i c = 100ma, v ce = 1v collector-emitter saturation voltage v ce(sat) ? 0.5 v i c = 300ma, i b = 30ma collector-base breakdown voltage v (br)cbo 45 ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 18 ? v i c = 1ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5 ? v i e = 100 a, i c = 0 collector cutoff current i cbo ? 1 a v cb = 40v, i e = 0 emitter cutoff current i ebo ? 1 a v eb = 4v, i c = 0 current gain-bandwidth product f t 100 ? mhz v ce = 10v, i c = 50ma, f = 100mhz capacitance c obo ? 8 pf v cb = 10v, i e = 0, f = 1mhz electrical characteristics, drdn005w npn transistor @t a = 25c unless otherwise specified characteristic symbol min max unit test condition collector-base breakdown voltage v (br)cbo 80 ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 80 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 4.0 ? v i e = 100 a, i c = 0 collector cutoff current i cbo ? 100 na v cb = 60v, i e = 0 v cb = 80v, i e = 0 collector cutoff current i ces ? 100 na v ce = 60v, i bo = 0v v ce = 80v, i bo = 0v dc current gain h fe 100 ? ? i c = 10ma, v ce = 1.0v i c = 100ma, v ce = 1.0v collector-emitter saturation voltage v ce(sat) ? 0.25 v i c = 100ma, i b = 10ma base-emitter saturation voltage v be(sat) ? 1.2 v i c = 100ma, v ce = 1.0v current gain-bandwidth product f t 100 ? mhz v ce = 2.0v, i c = 10ma, f = 100mhz electrical characteristics, drdp006w pnp transistor @t a = 25c unless otherwise specified characteristic symbol min max unit test condition dc current gain h fe 100 300 ? i c = -150ma, v ce = -10v collector-emitter saturation voltage v ce(sat) ? -0.4 v i c = -150ma, i b = -15ma collector-base breakdown voltage v (br)cbo -60 ? v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -60 ? v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5 ? v i e = -10 a, i c = 0 collector cutoff current i cbo ? -10 na v cb = -50v, i e = 0 current gain-bandwidth product f t 200 ? mhz v ce = -20v, i c = -50ma, f = 100mhz capacitance c obo ? 8 pf v cb = -10v, i e = 0, f = 1mhz electrical characteristics, drdnb 16w pre-biased npn transistor @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition v l(off) 0.3 ? ? v v cc = 5v, i o = 100 a input voltage v l(on) ? ? 2.0 v v o = 0.3v, i o = 20ma output voltage v o(on) ? ? 0.3v v i o /i l = 50ma/2.5ma input current i l ? ? 7.2 ma v i = 5v output current i o(off) ? ? 0.5 a v cc = 50v, v i = 0v dc current gain g l 56 ? ? ? v o = 5v, i o = 50ma gain-bandwidth product f t ? 200 ? mhz v ce = 10v, i e = 5ma, f = 100mhz
ds30573 rev. 10 - 2 4 of 9 www.diodes.com drd (xxxx) w ? diodes incorporated electrical characteristics, drdnb 26w pre-biased npn transistor @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition v l(off) 0.5 ? ? v v cc = 5v, i o = 100 a input voltage v l(on) ? ? 3.0 v v o = 0.3v, i o = 20ma output voltage v o(on) ? ? 0.3v v i o /i l = 50ma/2.5ma input current i l ? ? 28 ma v i = 5v output current i o(off) ? ? 0.5 a v cc = 50v, v i = 0v dc current gain g l 47 ? ? ? v o = 5v, i o = 50ma gain-bandwidth product f t ? 200 ? mhz v ce = 10v, i e = 5ma, f = 100mhz electrical characteristics, drdpb 16w pre-biased pnp transistor @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition v l(off) -0.3 ? ? v v cc = -5v, i o = -100 a input voltage v l(on) ? ? -2.0 v v o = -0.3v, i o = -20ma output voltage v o(on) ? ? -0.3v v i o /i l = -50ma/-2.5ma input current i l ? ? -7.2 ma v i = -5v output current i o(off) ? ? -0.5 a v cc = -50v, v i = 0v dc current gain g l 56 ? ? ? v o = -5v, i o = -50ma gain-bandwidth product f t ? 200 ? mhz v ce = -10v, i e = -5ma, f = 100mhz electrical characteristics, drdpb 26w pre-biased pnp transistor @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition v l(off) -0.5 ? ? v v cc = -5v, i o = -100 a input voltage v l(on) ? ? -3.0 v v o = -0.3v, i o = -20ma output voltage v o(on) ? ? -0.3v v i o /i l = -50ma/-2.5ma input current i l ? ? -28 ma v i = -5v output current i o(off) ? ? -0.5 a v cc = -50v, v i = 0v dc current gain g l 47 ? ? ? v o = -5v, i o = -50ma gain-bandwidth product f t ? 200 ? mhz v ce = -10v, i e = -5ma, f = 100mhz electrical characteris tics, switching diode @t a = 25c unless otherwise specified characteristic symbol min max unit test condition reverse breakdown voltage (note 4) v (br)r 75 ? ? i r = 10 a forward voltage v f 0.62 ? ? ? 0.72 0.855 1.0 1.25 v i f = 5.0ma i f = 10ma i f = 100ma i f = 150ma reverse current (note 4) i r ? 2.5 50 30 25 a a a na v r = 75v v r = 75v, t j = 150 c v r = 25v, t j = 150 c v r = 20v total capacitance c t ? 4.0 pf v r = 0, f = 1.0mhz reverse recovery time t rr ? 4.0 ns i f = i r = 10ma, i rr = 0.1 x i r , r l = 100 notes: 4. short duration pulse test used to minimize self-heating effect.
device characteristics ds30573 rev. 10 - 2 5 of 9 www.diodes.com drd (xxxx) w ? diodes incorporated 0 50 100 40 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1, power derating curve (total device) a 150 200 250 0 80 120 160 r = 625c/w ja 1 1,000 100 0.0001 0.001 0.01 1 10 0.1 h, d c c u r r e n t g ai n fe i , collector current (a) fig. 2, typical dc current gain vs. collector current (drdn010w) c v = 1.0v ce 1 100 10 0.1 1 10 100 c , o u t p u t c a p a c i t an c e (p f ) obo v , collector-base voltage (v) fig. 3, typical output capacitance vs. collector-base voltage (drdn010w) cb f = 1mhz 1 10 1,000 100 0.0001 0.001 0.01 0.1 1 10 v, c o lle c t o r -emi t t e r saturation voltage (mv) ce (sat) i , collector current (a) fig. 4, typical collector saturation voltage vs. collector current (drdn010w) c i , collector-base current (na) cbo t , ambient temperature (oc) fig. 5, typical collector-cutoff current vs. ambient temperature (drdn005w) a 10 0.01 0.1 1 25 50 75 100 125 0.001 0.01 i base current (ma) fig. 6, typical collector saturation region b, (drdn005w) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100 v, c o lle c t o r emi t t e r v o l t a g e (v) ce i = 1ma c i = 10ma c i = 30ma c i = 100ma c
11 0 100 1,000 v, c o lle c t o r -e m i t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 7, typical collector-emitter saturation voltage vs. collector current (drdn005w) c t = 25c a t = -50c a t = 150c a 0.050 0 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 i i c b = 10 1 10 1,000 10,000 100 1 10 1,000 100 h, d c c u r r en t g ain fe i , collector current (ma) fig. 8, typical dc current gain vs. collector current (drdn005w) c t = -50c a t = 25c a t = 150c a v = 5v ce 0.1 0.2 0.1 11 0 v , base-emi 1 0 0 t t e r o n v o l t a g e (v) be(on) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v = 5v ce i , collector current (ma) fig. 9, typical base-emitter on voltage vs. collector current (drdn005w) c t = -50c a t = 25c a t = 150c a 1 10 1,000 100 1 10 f, g ai n ba n dwid t h p r o d u c t (m h z) t i , collector current (ma) fig. 10, typical gain bandwidth product vs. collector current (drdn005w) c 0 0.1 0.2 0.3 0.6 0.5 0.4 11 0 100 1,000 i , collector current (ma) fig.11, typical collector-emitter saturation voltage vs. collector current (drdp006w) c v, c o llect o r -emitte r saturation voltage (v) ce(sat) i i c b = 10 t = 150c a t = 25c a t = -50c a i , base current (ma) fig. 12, typical collector saturation region (drdp006w) b v, c o lle c t o r -emi t t e r v o l t a g e (v) ce 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 i = 1ma c i = 10ma c i = 30ma c i = 100ma c i = 300ma c ds30573 rev. 10 - 2 6 of 9 www. diodes.com drd (xxxx) w ? diodes incorporated
1 10 1,000 100 11 0 100 h, d 1 , 0 0 0 c c u r r en t g ain fe i , collector current (ma) fig. 13, typical dc current gain vs. collector current (drdp006w) c v = 5v ce t = 150c a t = 25c a t = -50c a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 v , base-e m i t t e r o n v o l t a g e (v) be(on) i , collector current (ma) fig. 14, typical base-emitter on voltage vs. collector current (drdp006w) c v = 5v ce t = -50c a 1 10 1,000 100 11 0 100 f, g ai n ba n dwid t h p r o d u c t (m h z) t i , collector current (ma) fig. 15, typical gain bandwidth product vs. collector current (drdp006w) c v = 5v ce 1.0 5.0 20 10 30 -0.1 -10 -1.0 -30 c , c a p a c i t a n c e ( p f ) v , reverse voltage (v) fig. 16, typical capacitance (drdp006w) r c ibo f = 1mhz 10 100 1,000 1 0.1 0 1.6 1.2 0.4 0.8 i, i n s t a n t a n e o u s f o r wa r d c u r r e n t (ma) f v , instantaneous forward voltage (v) fig. 17, typical forward characteristics (switching diode) f t = -40oc a 0.1 1 10 100 1,000 10,000 0 20 40 60 80 100 v , reverse voltage (v) fig. 18, typical reverse characteristics (switching diode) r i, ins t an t ane o u s r eve r se c u r r en t (na) r t = 125oc a ds30573 rev. 10 - 2 7 of 9 www. diodes.com drd (xxxx) w ? diodes incorporated
0 0.5 1 2.5 2 1.5 3 01020 30 40 c , t o t al c a p a c i t a n c e (pf) t v , reverse voltage (v) fig. 19, typical capacitance vs. reverse voltage (switching diode) r f = 1mhz ordering information (note 5) device packaging shipping drdn010w-7 sot-363 3000/tape & reel drdp006w-7 sot-363 3000/tape & reel drdnb16w-7 sot-363 3000/tape & reel drdnb26w-7 sot-363 3000/tape & reel drdpb16w-7 sot-363 3000/tape & reel drdpb26w-7 sot-363 3000/tape & reel drdn005w-7 sot-363 3000/tape & reel notes: 5. for packaging details, go to our website at http://www.di odes.com/datas heets/ap02007.pdf. marking information rdxx = product type marking code: rd01 = drdn010w rd02 = drdp006w rd03 = drdnb16w rd04 = drdnb26w rd05 = drdpb16w rd06 = drdpb26w rd07 = drdn005w y m = date code marking y = year ex: s = 2005 m = month ex: 9 = september rdxx ym date code key year 2005 2006 2007 2008 2009 2010 2011 2012 code s t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d ds30573 rev. 10 - 2 8 of 9 www. diodes.com drd (xxxx) w ? diodes incorporated
sample applications relay drdp006w r1 r2 rl relay drdnb16w 1k 10k rl relay drdn010w/ drdn005w r1 r2 rl ds30573 rev. 10 - 2 9 of 9 www.diodes.com drd (xxxx) w ? diodes incorporated application example: drdn010w/drdn005w current sink configuration, bi as resistors not included application example: drdp006w current source configuration, bias resistors not included application example: drdnb16w current sink configuration w ith built-in bias resistors relay drdnb26w 220 4.7k rl relay drdpb26w 220 4.7k rl relay drdpb16w 1k 10k rl application example: drdnb26w current sink configuration with built-in bias resistors (low r1) application example: drdpb16w current source configuration w ith built-in bias resistors application example: drdpb26w current source configuration w ith built-in bias resistors (low r1) suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. x z y c e e g dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c 1.9 e 0.65
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